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FDMD8540L - onsemi

Description: 100% UIL Tested; Ideal for Flexible Layout in Primary Side of Bridge Topology; Kelvin High Side MOSFET Drive Pin-out Capability; Q1: N-Channel Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 33 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 26 A; RoHS Compliant; Q2: N-Channel Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 33 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 26 A

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PCB Footprints
FDMD8540L - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AT ISSUE O
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3D Models
FDMD8540L - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AT ISSUE O
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FDMD8540L Details

  • Manufacturer Part Number:

    FDMD8540L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    541 mJ

  • Case Connection:

    DRAIN SOURCE

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    156 A

  • Drain-source On Resistance-Max:

    0.0015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    135 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62 W

  • Pulsed Drain Current-Max (IDM):

    886 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    106 ns

  • Turn-on Time-Max (ton):

    52 ns

FDMD8540L Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDMD8540L involves keeping the input and output traces as short as possible, using a solid ground plane, and minimizing the distance between the device and the load. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
  • To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the EN pin to a logic-level signal (e.g., 0V or 3.3V) to enable or disable the device. The VCC pin should be decoupled with a 10uF capacitor to ensure stable operation.
  • The FDMD8540L can handle a maximum continuous current of 1A per channel, with a peak current rating of 2A per channel. However, it's recommended to derate the current handling capability based on the ambient temperature and the device's thermal characteristics.
  • To protect the FDMD8540L from overvoltage and ESD, use a TVS (Transient Voltage Suppressor) diode or a zener diode on the input lines, and ensure that the device is handled and stored in an ESD-protected environment.
  • The FDMD8540L is rated for operation from -40°C to 125°C, but the device's performance and reliability may degrade at extreme temperatures. It's recommended to operate the device within a temperature range of 0°C to 85°C for optimal performance.

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