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FDMD8580 - onsemi

Description: Kelvin High Side MOSFET Drive Pin-out Capability; Q1: N-Channel Max rDS(on) = 4.6 mΩ at VGS = 10 V, ID = 16 A Max rDS(on) = 6.0 mΩ at VGS = 8 V, ID = 14 A; Ideal for Flexible Layout in Primary Side of Bridge Topology ; 100% UIL Tested; RoHS Compliant; Q2: N-Channel Max rDS(on) = 4.6 mΩ at VGS = 10 V, ID = 16 A Max rDS(on) = 6.0 mΩ at VGS = 8 V, ID = 14 A

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PCB Footprints
FDMD8580 - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AT ISSUE O
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3D Models
FDMD8580 - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AT ISSUE O
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FDMD8580 Details

  • Manufacturer Part Number:

    FDMD8580

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AT

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    337 mJ

  • Case Connection:

    DRAIN SOURCE

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    82 A

  • Drain-source On Resistance-Max:

    0.0046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    38 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    59 W

  • Pulsed Drain Current-Max (IDM):

    482 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    70 ns

  • Turn-on Time-Max (ton):

    74 ns

FDMD8580 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output traces as short as possible and avoid crossing them over each other.
  • The FDMD8580 requires a bias voltage of 5V on the VCC pin and a bias current of 10mA on the VBIAS pin. Ensure the bias voltage is stable and noise-free.
  • The FDMD8580 can handle input powers up to +20dBm. Exceeding this limit may cause damage to the device.
  • Optimize the input and output matching networks for minimum noise figure and maximum gain. Use a low-noise amplifier and a high-Q inductor in the input matching network.
  • The recommended operating temperature range for the FDMD8580 is -40°C to +85°C. Operating outside this range may affect device performance and reliability.

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FDMD8580 Overview

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