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FDMD8680 - onsemi

Description: Large Source Pad on Bottom of Package for Enhanced Thermals; Max rDS(on) = 4.7 mΩ at VGS = = 10 V, ID = 16 A; Max rDS(on) = 6.4 mΩ at VGS = = 8 V, ID = 14 A; Ideal for Flexible Layout in Secondary Side Synchronous Rectification; 100% UIL Tested; Termination is Lead-free and RoHS Compliant; Common source configuration to Eliminate PCB Routing

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PCB Footprints
FDMD8680 - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AS ISSUE O
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3D Models
FDMD8680 - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AS ISSUE O
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FDMD8680 Details

  • Manufacturer Part Number:

    FDMD8680

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AS

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    111 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    337 mJ

  • Case Connection:

    SOURCE

  • Configuration:

    COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    66 A

  • Drain-source On Resistance-Max:

    0.0047 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    77 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    39 W

  • Pulsed Drain Current-Max (IDM):

    487 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    68 ns

  • Turn-on Time-Max (ton):

    64 ns

FDMD8680 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output tracks as short as possible and use a common mode choke to reduce EMI.
  • The FDMD8680 requires a bias voltage of 3.3V or 5V. Ensure the bias voltage is stable and noise-free, and use a low-dropout regulator (LDO) to regulate the voltage. Also, decouple the bias pin with a 10nF capacitor to reduce noise.
  • The FDMD8680 can handle input powers up to +10dBm. Exceeding this limit may cause damage to the device or affect its performance.
  • To optimize for low power consumption, use a low-power mode, reduce the bias voltage, and minimize the input signal amplitude. Additionally, use a power-saving mode during idle periods to reduce power consumption.
  • The recommended operating temperature range for the FDMD8680 is -40°C to +85°C. Operating outside this range may affect the device's performance and reliability.

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FDMD8680 Overview

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