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FDMQ86530L - onsemi

Description: Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A; Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A; Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A; Substantial efficiency benefit in PD solutions; RoHS Compliant

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PCB Footprints
FDMQ86530L - onsemi PCB footprint - Other - Other - WDFN12 5x4.5, 0.8P CASE 511CR ISSUE A
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3D Models
FDMQ86530L - onsemi  - 3D model - Other - WDFN12 5x4.5, 0.8P CASE 511CR ISSUE A
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FDMQ86530L Details

  • Manufacturer Part Number:

    FDMQ86530L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-12

  • Manufacturer Package Code:

    511CR

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Case Connection:

    DRAIN SOURCE

  • Configuration:

    COMPLEX

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.0175 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PDSO-N12

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    4

  • Number of Terminals:

    12

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    22 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    45 ns

  • Turn-on Time-Max (ton):

    28 ns

FDMQ86530L Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal path short and use a thermal pad on the bottom of the package.
  • Use a heat sink, ensure good airflow, and follow the recommended thermal design guidelines. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V for reliable operation.
  • Use ESD protection devices, such as TVS diodes, and follow proper handling and storage procedures to prevent ESD damage.
  • A gate resistor value between 10Ω to 100Ω is recommended, depending on the specific application and switching frequency.

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FDMQ86530L Overview

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