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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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FDMQ8205
onsemi
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1 | Low rDS(on) 80V Rated MOSFETs; Maximizing Available Power and Voltage ; Self Driving Circuitry for MOSFETs ; IEEE802.3at Compatible Meet Detection and Classification Requirement Work with 2 and 4-pair Architecture Small Backfeed Voltage; Low Power Loss GreenBridgeTM Replaces Diode Bridge; Compact MLP 4.5x5 Package ; Eliminating Thermal Design Problems | Other | FDMQ8205 |
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FDMQ86530L
onsemi
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1 | Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 8 A; Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A; Max rDS(on) = 25 mΩ at VGS = 4.5 V, ID = 6.5 A; Substantial efficiency benefit in PD solutions; RoHS Compliant | Other | FDMQ86530L |
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FDMQ8403
onsemi
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1 | RoHS Compliant ; Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A ; Substantial efficiency benefit in PD solutions ; Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A | Other | FDMQ8403 |
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FDMQ8205A
onsemi
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1 | Eliminating Thermal Design Problems ; Self Driving Circuitry for MOSFETs ; Low Power Loss GreenBridgeTM Replaces Diode Bridge ; Low rDS(on) 100V Rated MOSFETs ; Maximizing Available Power and Voltage ; Compact MLP 4.5x5 Package ; IEEE802.3at Compatible Meet Detection and Classification Requirement Work with 2 and 4-pair Architecture Small Backfeed Voltage | Other | FDMQ8205A |
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FDMQ8203
onsemi
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1 | Dual N-Channel and Dual P-Channel PowerTrench® MOSFET, GreenBridge™ Series of High-Efficiency Bridge Rectifiers | Other | FDMQ8203 |
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FDMQ8205A-D
onsemi
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1 | Bridge Rectifier | Other | FDMQ8205A-D |
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FDMQ86530L
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 8A I(D), N-Channel, Metal-oxide Semiconductor FET | FDMQ86530L |
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FDMQ8203
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3.4A I(D), 100V, 0.11ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, 5 X 4.50 MM, ROHS COMPLIANT, MLP, 12 PIN | FDMQ8203 |
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FDMQ8205
Fairchild Semiconductor Corporation
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1 | Small Signal Field-Effect Transistor, 1.7A I(D), 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | FDMQ8205 |
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FDMQ8403
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3.1A I(D), 100V, 0.11ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDMQ8403 |
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