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FDMS004N08C - onsemi

Description: Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 44 A; Shielded Gate MOSFET Technology; 50% Lower Qrr than Other MOSFET Suppliers; MSL1 Robust Package Design; Max rDS(on) = 10.4 mΩ at VGS = 6 V, ID = 22 A; RoHS Compliant; 100% UIL Tested; Lowers Switching Noise/EMI

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PCB Footprints
FDMS004N08C - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A FFW
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3D Models
FDMS004N08C - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A FFW
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FDMS004N08C Details

  • Manufacturer Part Number:

    FDMS004N08C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    QFN-8

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Date Of Intro:

    2017-02-03

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    486 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    126 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    40 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    637 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    50 ns

  • Turn-on Time-Max (ton):

    42 ns

FDMS004N08C Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the FDMS004N08C is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is 5V.
  • The maximum power dissipation of the FDMS004N08C is 1.5W, and it is recommended to use a heat sink to ensure reliable operation.
  • The FDMS004N08C is rated for operation up to 150°C, but it is recommended to derate the power dissipation at higher temperatures to ensure reliable operation.
  • To protect the FDMS004N08C from ESD, use an ESD wrist strap or mat, and handle the device by the body or pins, not the die.

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FDMS004N08C Overview

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