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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 44 A; Shielded Gate MOSFET Technology; 50% Lower Qrr than Other MOSFET Suppliers; MSL1 Robust Package Design; Max rDS(on) = 10.4 mΩ at VGS = 6 V, ID = 22 A; RoHS Compliant; 100% UIL Tested; Lowers Switching Noise/EMI Other FDMS004N08C 1 Download Model
Part Image Part Image 1 Fast Switching Speed; RDS(on) = 2.4 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A; RoHS Compliant; Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency; 100% UIL Tested Other FDMS030N06B 1 Download Model
Part Image Part Image 1 Logic Level drive Capable; Shielded Gate MOSFET Technology ; Max rDS(on) = 6.7 mΩ at VGS = 10 V, ID = 21 A ; Max rDS(on) = 9.9 mΩ at VGS = 4.5 V, ID = 17 A ; 50% Lower Qrr than Other MOSFET Suppliers ; Lowers Switching Noise/EMI ; MSL1 Robust Package Design ; 100% UIL Tested ; RoHS Compliant Other FDMS007N08LC 1 Download Model
Part Image Part Image 1 100% UIL tested ; Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 25 A ; MSL1 robust package design ; SyncFET Schottky Body Diode ; RoHS Compliant ; Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency Other FDMS0300S 1 Download Model
Part Image Part Image 1 Last Shipments - PowerTrench® Power Clip Asymmetric Dual N-Channel MOSFET, 30 V Other FDMS0310S 1 Download Model
Part Image Part Image 1 RoHS Compliant ; 100% UIL tested ; Advanced package and silicon combination for low rDS(on) and high efficiency ; SyncFET Schottky Body Diode ; Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A ; MSL1 Robust Package Design ; Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A Other FDMS0309AS 1 Download Model
Part Image Part Image 1 100% UIL Tested; Low Reverse Recovery Charge, Qrr = 80nC; RDS(on) = 3.2 mΩ (Typ.)@ VGS = 10 V, ID = 50 A; RoHS Compliant; Low FOM RDS(on) *QG; Fast Switching Speed; Enables highly efficiency in synchronous rectification; Soft reverse recovery Body Diode Other FDMS039N08B 1 Download Model
Part Image Part Image 1 Advanced Package and Silicon combination for low rDS(on)and high efficiency; RoHS Compliant; MSL1 robust package design; Max rDS(on) = 5.8 mΩ at VGS = 4.5 V, ID = 14 A; SyncFET Schottky Body Diode; 100% UIL tested; Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 18 A Other FDMS0312S 1 Download Model
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FDMS001G-C0C Flexxon Pte Ltd
1 Flash Card, 1GX8 FDMS001G-C0C 0 Build or Request
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FDMS008G-CAB Flexxon Pte Ltd
1 Flash Card, 8GX8 FDMS008G-CAB 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA FDMS0308AS 0 Build or Request
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FDMS032G-CAC Flexxon Pte Ltd
1 Flash Card, 32GX8 FDMS032G-CAC 0 Build or Request
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FDMS002G-C48 Flexxon Pte Ltd
1 Flash Card, 2GX8 FDMS002G-C48 0 Build or Request
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FDMS002G-C0C Flexxon Pte Ltd
1 Flash Card, 2GX8 FDMS002G-C0C 0 Build or Request
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FDMS0346 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor FDMS0346 0 Build or Request
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FDMS001G-C4D Flexxon Pte Ltd
1 Flash Card, 1GX8 FDMS001G-C4D 0 Build or Request
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FDMS004G-CAD Flexxon Pte Ltd
1 Flash Card, 4GX8 FDMS004G-CAD 0 Build or Request
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FDMS002G-CAJ Flexxon Pte Ltd
1 Flash Card, 2GX8 FDMS002G-CAJ 0 Build or Request
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FDMS004G-CAH Flexxon Pte Ltd
1 Flash Card, 4GX8 FDMS004G-CAH 0 Build or Request
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FDMS032G-CAF Flexxon Pte Ltd
1 Flash Card, 32GX8 FDMS032G-CAF 0 Build or Request
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FDMS032G-CAJ Flexxon Pte Ltd
1 Flash Card, 32GX8 FDMS032G-CAJ 0 Build or Request
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FDMS008G-CAK Flexxon Pte Ltd
1 Flash Card, 8GX8 FDMS008G-CAK 0 Build or Request
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FDMS032G-CAG Flexxon Pte Ltd
1 Flash Card, 32GX8 FDMS032G-CAG 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 19A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA FDMS0310AS 0 Build or Request
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FDMS064M-C0G Flexxon Pte Ltd
1 Flash Card, 64MX8 FDMS064M-C0G 0 Build or Request
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