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FDMS0309AS - onsemi

Description: RoHS Compliant ; 100% UIL tested ; Advanced package and silicon combination for low rDS(on) and high efficiency ; SyncFET Schottky Body Diode ; Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A ; MSL1 Robust Package Design ; Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A

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PCB Footprints
FDMS0309AS - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_2019OCT
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3D Models
FDMS0309AS - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_2019OCT
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FDMS0309AS Details

  • Manufacturer Part Number:

    FDMS0309AS

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    ROHS COMPLIANT, POWER 56, 8 PIN

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    23 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    66 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS0309AS Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. This helps to dissipate heat efficiently and reduces thermal resistance.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Also, provide adequate heat sinking and thermal management to prevent overheating.
  • The maximum allowed voltage on the gate pin is ±20V, with a recommended operating range of -5V to 15V for reliable operation.
  • Yes, FDMS0309AS is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly snubbed and the PCB layout is optimized for high-frequency operation.
  • Use ESD protection devices such as TVS diodes or ESD protection arrays on the input and output pins. Also, follow proper handling and storage procedures to prevent ESD damage.

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FDMS0309AS Overview

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