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FDMS0300S - onsemi

Description: 100% UIL tested ; Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 25 A ; MSL1 robust package design ; SyncFET Schottky Body Diode ; RoHS Compliant ; Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A ; Advanced Package and Silicon combination for low rDS(on) and high efficiency

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PCB Footprints
FDMS0300S - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_2019OCT
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3D Models
FDMS0300S - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_2019OCT
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FDMS0300S Details

  • Manufacturer Part Number:

    FDMS0300S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    ROHS COMPLIANT, POWER 56, 8 PIN

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    242 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.0018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    96 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS0300S Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. This helps to dissipate heat efficiently and reduces thermal resistance.
  • Ensure that the device is operated within the recommended temperature range (−40°C to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, consider derating the device's power handling at high temperatures.
  • A gate drive voltage of 10-15V is recommended for optimal switching performance. This ensures that the device is fully enhanced and minimizes switching losses.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage conditions. Also, consider using a current sense resistor and a fuse to detect and respond to overcurrent conditions.
  • A dead time of 10-20 ns is recommended to minimize shoot-through current. This ensures that the device is fully turned off before the complementary device is turned on.

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FDMS0300S Overview

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