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FDMS039N08B - onsemi

Description: 100% UIL Tested; Low Reverse Recovery Charge, Qrr = 80nC; RDS(on) = 3.2 mΩ (Typ.)@ VGS = 10 V, ID = 50 A; RoHS Compliant; Low FOM RDS(on) *QG; Fast Switching Speed; Enables highly efficiency in synchronous rectification; Soft reverse recovery Body Diode

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PCB Footprints
FDMS039N08B - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_1
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3D Models
FDMS039N08B - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_1
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FDMS039N08B Details

  • Manufacturer Part Number:

    FDMS039N08B

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    QFN-8

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    240 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0039 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    150 ns

  • Turn-on Time-Max (ton):

    154 ns

FDMS039N08B Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the FDMS039N08B is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is 5V.
  • The maximum power dissipation of the FDMS039N08B is 1.5W, and it is recommended to use a heat sink to ensure reliable operation.
  • The FDMS039N08B is rated for operation up to 150°C, but the maximum junction temperature should not exceed 175°C. Derate the power dissipation accordingly for high-temperature operation.
  • Use ESD protection devices, such as TVS diodes or ESD protection arrays, to protect the FDMS039N08B from electrostatic discharge. Handle the device by the body, not the pins, and use an anti-static wrist strap or mat.

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FDMS039N08B Overview

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