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FDMS007N08LC - onsemi

Description: Logic Level drive Capable; Shielded Gate MOSFET Technology ; Max rDS(on) = 6.7 mΩ at VGS = 10 V, ID = 21 A ; Max rDS(on) = 9.9 mΩ at VGS = 4.5 V, ID = 17 A ; 50% Lower Qrr than Other MOSFET Suppliers ; Lowers Switching Noise/EMI ; MSL1 Robust Package Design ; 100% UIL Tested ; RoHS Compliant

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PCB Footprints
FDMS007N08LC - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A FFW
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3D Models
FDMS007N08LC - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A FFW
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FDMS007N08LC Details

  • Manufacturer Part Number:

    FDMS007N08LC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    181.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    84 A

  • Drain-source On Resistance-Max:

    0.0067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    40 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    92.6 W

  • Pulsed Drain Current-Max (IDM):

    345 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    77 ns

  • Turn-on Time-Max (ton):

    31 ns

FDMS007N08LC Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the FDMS007N08LC is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 30V, depending on the application.
  • The maximum power dissipation of the FDMS007N08LC is 1.5W, and it is recommended to use a heat sink to ensure reliable operation.
  • Yes, the FDMS007N08LC can be used in high-temperature applications up to 150°C, but the maximum junction temperature (Tj) should not exceed 175°C.
  • To protect the FDMS007N08LC from ESD, it is recommended to use ESD protection devices, such as TVS diodes, and follow proper handling and storage procedures.

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