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FDMS0312S - onsemi

Description: Advanced Package and Silicon combination for low rDS(on)and high efficiency; RoHS Compliant; MSL1 robust package design; Max rDS(on) = 5.8 mΩ at VGS = 4.5 V, ID = 14 A; SyncFET Schottky Body Diode; 100% UIL tested; Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 18 A

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PCB Footprints
FDMS0312S - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_2021
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3D Models
FDMS0312S - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A_2021
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FDMS0312S Details

  • Manufacturer Part Number:

    FDMS0312S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    ROHS COMPLIANT, POWER 56, 8 PIN

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.0044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    46 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS0312S Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
  • Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a stable voltage regulator and decoupling capacitors to minimize noise and ripple.
  • The maximum allowed current is 3A. Exceeding this limit may cause the device to overheat or fail. Ensure the device is properly heatsinked and the current is within the recommended range.
  • Use a TVS diode or a zener diode to clamp the input voltage. Add ESD protection devices, such as a transient voltage suppressor (TVS), to protect the device from electrostatic discharge.
  • The recommended operating temperature range is -40°C to 150°C. Operating the device outside this range may affect its performance and reliability.

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FDMS0312S Overview

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