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FDMS0310S - onsemi

Description: Last Shipments - PowerTrench® Power Clip Asymmetric Dual N-Channel MOSFET, 30 V

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FDMS0310S - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE A
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FDMS0310S Details

  • Manufacturer Part Number:

    FDMS0310S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PQFN-8

  • Package Description:

    ROHS COMPLIANT, POWER 56, 8 PIN

  • Manufacturer Package Code:

    483AE

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS0310S Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. It's also recommended to use a thermal pad on the bottom of the device and connect it to a thermal plane or a heat sink.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Typically, this involves applying a voltage supply (VCC) between 4.5V to 5.5V, and a gate-source voltage (VGS) between 2V to 4V. Additionally, ensure the input signals are within the recommended voltage range and that the device is properly decoupled.
  • To mitigate EMI and RFI, use a shielded layout, keep the device away from noise sources, and use a common-mode choke or ferrite bead on the input lines. Additionally, ensure the device is properly decoupled, and use a low-pass filter or a pi-filter on the output lines.
  • The maximum power dissipation of the FDMS0310S can be determined by calculating the total power loss (PT) using the equation: PT = PD + PG, where PD is the drain-source power loss and PG is the gate-source power loss. The maximum power dissipation is typically limited by the junction temperature (TJ) and the thermal resistance (RθJA) of the device.
  • Recommended test and measurement techniques include using a curve tracer or a semiconductor parameter analyzer to measure the device's I-V characteristics, and a network analyzer or a spectrum analyzer to measure the device's frequency response and noise figure.

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FDMS0310S Overview

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