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FDMS3664S - onsemi

Description: Low inductance packaging shortens rise/fall times, resulting in lower switching losses; RoHS Compliant; Q2: N-Channel Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A; Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

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FDMS3664S Details

  • Manufacturer Part Number:

    FDMS3664S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    QFN-8

  • Manufacturer Package Code:

    483AJ

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7.2

  • Case Connection:

    DRAIN SOURCE

  • Configuration:

    SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    70 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS3664S Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDMS3664S involves keeping the high-frequency switching nodes (e.g., drain-source voltage) away from sensitive analog circuits, using a solid ground plane, and minimizing loop areas in the power stage. Additionally, it's recommended to use a shielded inductor and to place the device close to the input capacitors.
  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or a metal plate. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the heat sink is properly attached to the device. The recommended junction temperature (TJ) is below 150°C.
  • The recommended input capacitor type is a low-ESR ceramic capacitor (e.g., X5R or X7R) with a value of 4.7 μF to 10 μF. This helps to filter out high-frequency noise and ensure stable operation.
  • To minimize standby power consumption, ensure that the enable pin (EN) is properly driven to a logic low level when the device is not in use. Additionally, consider using a low-quiescent-current voltage regulator for the VCC supply, and optimize the system's power management scheme to minimize power consumption during standby modes.
  • The recommended output capacitor type is a low-ESR ceramic capacitor (e.g., X5R or X7R) with a value of 10 μF to 22 μF. This helps to filter out high-frequency noise and ensure stable output voltage regulation.

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FDMS3664S Overview

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