FDMS3 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Obsolete - Asymmetric Dual N-Channel PowerTrench Power Stage MOSFET, 25V Other FDMS3624S 1 Download Model
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FDMS3662 onsemi
1 100% UIL Tested ; RoHS compliant ; MSL1 robust package design ; Advanced Package and Silicon combination for low RDS(on) ; Maximum RDS(on) = 14.8 mΩ at VGS = 10 V, ID = 8.9 A Other FDMS3662 1 Download Model
Part Image Part Image 1 Q2: N-Channel Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A ; Low inductance packaging shortens rise/fall times, resulting in lower switching losses ; Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A; MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing ; RoHS Compliant Other FDMS3660S 1 Download Model
Part Image Part Image 1 Obsolete - Asymmetric Dual N-Channel PowerTrench Power Stage, 25V Other FDMS36101L-F085 1 Download Model
Part Image Part Image 1 Obsolete - Asymmetric Dual N-Channel PowerTrench PowerStage MOSFET, 25V Other FDMS3615S 1 Download Model
Part Image Part Image 1 Obsolete - Asymmetric Dual N-Channel PowerTrench Power Stage MOSFET 25V Other FDMS3600S 1 Download Model
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FDMS3572 onsemi
1 Low Miller Charge ; Max rDS(on) = 24 mΩ at VGS = 6 V, ID = 8.4 A; RoHS Compliant ; Max rDS(on) = 16.5 mΩ at VGS = 10 V, ID = 8.8 A; Optimized efficiency at high frequencies ; Typ Qg = 28 nC at VGS = 10 V Other FDMS3572 1 Download Model
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FDMS3672 onsemi
1 RoHS Compliant ; Maximum RDS(on) = 29 mΩ at VGS= 6V, ID = 6.6A ; Typical Qg = 31 nC at VGS = 10 V ; Maximum RDS(on) = 23 mΩ at VGS = 10V, ID = 7.4A ; Optimized efficiency at high frequencies ; Low Miller Charge Other FDMS3672 1 Download Model
Part Image Part Image 1 Shielded Gate MOSFET Technology ; Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 45 A ; Max rDS(on) = 5.1 mΩ at VGS = 4.5 V, ID = 36 A ; 50% Lower Qrr than Other MOSFET Suppliers ; Lowers Switching Noise/EMI ; MSL1 Robust Package Design ; 100% UIL Tested ; RoHS Compliant ; Logic Level drive Capable Other FDMS3D5N08LC 1 Download Model
Part Image Part Image 1 Small Signal Field-Effect Transistor, 17.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDMS3610S 0 Build or Request
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FDMS3615S Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 16A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDMS3615S 0 Build or Request
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FDMS3602AS Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 15A I(D), 25V, 0.0056ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDMS3602AS 0 Build or Request
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FDMS3660AS Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA FDMS3660AS 0 Build or Request
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FDMS3604AS Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDMS3604AS 0 Build or Request
Part Image Part Image 1 Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA FDMS3606S 0 Build or Request
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FDMS3626S Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 17.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDMS3626S 0 Build or Request
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FDMS3606S Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA FDMS3606S 0 Build or Request
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FDMS3662 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 8.9A I(D), 100V, 0.0148ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDMS3662 0 Build or Request
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FDMS3620S Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 17.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDMS3620S 0 Build or Request
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FDMS3622S Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 17.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDMS3622S 0 Build or Request
Part Image Part Image 1 Small Signal Field-Effect Transistor FDMS3615S-PC01 0 Build or Request
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FDMS3672 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 22A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDMS3672 0 Build or Request
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FDMS3664S Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA FDMS3664S 0 Build or Request
Part Image Part Image 1 Small Signal Field-Effect Transistor, 17.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDMS3622S 0 Build or Request
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FDMS3600AS Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 15A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDMS3600AS 0 Build or Request
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