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FDMS3D5N08LC - onsemi

Description: Shielded Gate MOSFET Technology ; Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 45 A ; Max rDS(on) = 5.1 mΩ at VGS = 4.5 V, ID = 36 A ; 50% Lower Qrr than Other MOSFET Suppliers ; Lowers Switching Noise/EMI ; MSL1 Robust Package Design ; 100% UIL Tested ; RoHS Compliant ; Logic Level drive Capable

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PCB Footprints
FDMS3D5N08LC - onsemi PCB footprint - Other - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE B
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3D Models
FDMS3D5N08LC - onsemi  - 3D model - Other - PQFN8 5X6, 1.27P CASE 483AE ISSUE B
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FDMS3D5N08LC Details

  • Manufacturer Part Number:

    FDMS3D5N08LC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AE

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    486 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    136 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    745 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    147 ns

  • Turn-on Time-Max (ton):

    58 ns

FDMS3D5N08LC Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the FDMS3D5N08LC is 100 kHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and the source to ground through another resistor. The recommended biasing voltage is 5V.
  • The maximum power dissipation of the FDMS3D5N08LC is 1.5 W, and it is recommended to use a heat sink to ensure reliable operation.
  • The FDMS3D5N08LC is rated for operation up to 150°C, but the maximum junction temperature is 175°C. Ensure proper heat sinking and thermal management to prevent overheating.
  • Use ESD protection devices, such as diodes or resistors, in series with the gate and source pins to prevent ESD damage. Handle the device by the body, not the pins, and use an anti-static wrist strap or mat.

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FDMS3D5N08LC Overview

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