SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
25 V
Drain Current-Max (ID):
17.5 A
Drain-source On Resistance-Max:
0.005 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-PDSO-N6
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
2
Number of Terminals:
6
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
2.5 W
Surface Mount:
YES
Terminal Finish:
Tin (Sn)
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
FDMS3624S Frequently Asked Questions (FAQs)
A good PCB layout for optimal thermal performance involves placing thermal vias under the device, using a solid ground plane, and keeping the thermal path as short as possible. A 4-layer PCB with a dedicated thermal layer is recommended.
To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, consider derating the device's power handling capabilities at high temperatures.
The maximum allowed voltage on the enable pin (EN) is 6V. Exceeding this voltage may damage the device.
Yes, the FDMS3624S is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, layout, and thermal performance to ensure reliable operation.
To protect the device from electrical overstress (EOS), use a suitable TVS diode or ESD protection device on the input pins, and ensure that the device is operated within its recommended voltage and current ratings.
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Manufacturer Collaborated
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System Verified
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Community Approved
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FDMS3624S Overview
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