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FDMS86350 - onsemi

Description: Advanced Package and Silicon combination for low rDS(on) and high efficiency ; MSL1 robust package design ; Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A ; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A

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Symbol
FDMS86350 - onsemi - PCB symbol
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PCB Footprints
FDMS86350 - onsemi PCB footprint - Other - Other - FDMS86350-1
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3D Models
FDMS86350 - onsemi - 3D model - Other - FDMS86350-1
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FDMS86350 Details

  • Manufacturer Part Number:

    FDMS86350

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    864 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.0024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240AA

  • JESD-30 Code:

    R-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    156 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMS86350 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDMS86350 involves keeping the high-current paths short and wide, using multiple vias to connect the drain pad to the thermal pad, and ensuring good thermal conductivity to dissipate heat efficiently.
  • To optimize the gate drive circuit, use a low-impedance gate drive circuit with a high-current gate driver, and ensure the gate drive voltage is within the recommended range (typically 10-15V). Also, consider using a gate resistor to slow down the turn-on and turn-off times to reduce EMI.
  • The maximum allowed junction temperature for the FDMS86350 is 150°C. It's essential to ensure the device operates within this temperature range to prevent damage and ensure reliable operation.
  • To protect the FDMS86350 from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and consider adding overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The recommended operating frequency range for the FDMS86350 is up to 1 MHz, but it can be operated at higher frequencies with proper design and layout considerations.

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FDMS86350 Overview

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