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FDN359BN - onsemi

Description: Low Gate Charge (5nC typical); RDS(ON)= 0.060 Ω @ VGS = 4.5 V; RDS(ON)= 0.046 Ω @ VGS = 10 V; High Performance Version of Industry Standard SOT-23 Package. Identical Pin-Out to SOT-23 with 30% Higher Power Handling Capability; 2.7 A, 30 V.; Very Fast Switching

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PCB Footprints
FDN359BN - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23_1+
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3D Models
FDN359BN - onsemi  - 3D model - SOT23 (3-Pin) - SOT23_1+
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FDN359BN Details

  • Manufacturer Part Number:

    FDN359BN

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-23-3

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.7 A

  • Drain-source On Resistance-Max:

    0.046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    100 pF

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDN359BN Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDN359BN is -55°C to 150°C.
  • To ensure proper biasing, follow the recommended biasing circuit and voltage levels specified in the datasheet, and consider factors like input impedance, output impedance, and load conditions.
  • For optimal thermal performance, use a PCB layout with a solid ground plane, keep the transistor away from heat sources, and consider using thermal vias or heat sinks if necessary.
  • Handle the FDN359BN with ESD-protective equipment, use anti-static packaging, and follow proper grounding procedures to prevent ESD damage.
  • The FDN359BN has a typical lifespan of 10-15 years, depending on operating conditions, and is designed to meet high-reliability standards, with a failure rate of < 1 FIT (failures per billion hours).

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FDN359BN Overview

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Part Image FDN359AN Rochester Electronics LLC

2700mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3