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FDN5618P - onsemi

Description: High Performance Trench Technology for Extremely Low rDS(on); –1.25 A, –60 V; Fast Switching Speed; RDS(ON) = 0.200Ω @ VGS = –10 V; RDS(ON) = 0.230Ω @ VGS = –4.5 V

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PCB Footprints
FDN5618P - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - FDN5618P
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FDN5618P - onsemi  - 3D model - SOT23 (3-Pin) - FDN5618P
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FDN5618P Details

  • Manufacturer Part Number:

    FDN5618P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SUPERSOT-3

  • Manufacturer Package Code:

    527AG

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    1.25 A

  • Drain-source On Resistance-Max:

    0.17 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDN5618P Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDN5618P is -40°C to 150°C.
  • To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the GND pin to a solid ground plane. Also, ensure that the input voltage (VIN) is within the recommended range of 4.5V to 5.5V.
  • To minimize EMI and noise, use a multi-layer PCB with a solid ground plane, and keep the FDN5618P away from high-frequency components. Use short, direct traces for the input and output pins, and avoid routing signals under the device.
  • Yes, the FDN5618P is qualified for use in high-reliability applications, including automotive and aerospace. It meets the requirements of AEC-Q100 and is manufactured using a robust process to ensure high reliability.
  • To troubleshoot issues with the FDN5618P, start by verifying the power supply voltage and ensuring that it is within the recommended range. Check for any signs of overheating, and verify that the device is properly biased. Use an oscilloscope to monitor the input and output signals, and consult the datasheet and application notes for guidance.

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FDN5618P Overview

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Part Image FDN5618P Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET