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FDP020N06B_F102 - onsemi

Description: FDP020N06B_F102 N-Channel MOSFET, 120 A, 313 A, 60 V PowerTrench, 3-Pin TO-220 ON Semiconductor

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FDP020N06B_F102 Details

  • Manufacturer Part Number:

    FDP020N06B_F102

  • Brand Name:

    ON Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, PLASTIC PACKAGE-3

  • Manufacturer Package Code:

    TO220T03

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.1

  • Avalanche Energy Rating (Eas):

    1859 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.002 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    333 W

  • Pulsed Drain Current-Max (IDM):

    1252 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP020N06B_F102 Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the FDP020N06B_F102 is 150°C. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. Use a thermal interface material (TIM) and follow the recommended land pattern and thermal design guidelines from onsemi.
  • The recommended gate drive voltage for the FDP020N06B_F102 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • Yes, the FDP020N06B_F102 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, gate drive requirements, and thermal management when operating at high frequencies.
  • To protect the FDP020N06B_F102 from ESD, follow proper handling and storage procedures, use ESD-safe materials and equipment, and consider adding ESD protection devices or circuits in the application.

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FDP020N06B_F102 Overview

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