Please enter a minimum 3 letters or numbers
Technical Content
Part Image

FDP025N06 - onsemi

Description: Low Gate Charge; RoHS compliant; High Power and Current Handling Capability; RDS(on) = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A; High Performance Trench Technology for Extremely Low rDS(on); Fast Switching Speed

Download FDP025N06 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
FDP025N06 - onsemi - PCB symbol
click to zoom
PCB Footprints
FDP025N06 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 MOLDED 3,LEAD+
click to zoom
3D Models
FDP025N06 - onsemi - 3D model - Transistor Outline, Vertical - TO-220 MOLDED 3,LEAD+
click to zoom

FDP025N06 Details

  • Manufacturer Part Number:

    FDP025N06

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    2531 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.0025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    395 W

  • Pulsed Drain Current-Max (IDM):

    1060 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP025N06 Frequently Asked Questions (FAQs)

  • The maximum SOA for the FDP025N06 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be determined by plotting the device's voltage and current ratings against each other, taking into account the thermal resistance and maximum junction temperature.
  • To ensure the FDP025N06 is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the gate drive should be able to provide a current of at least 1A. Additionally, the gate resistance should be minimized to reduce the turn-on time.
  • The maximum allowed Vds for the FDP025N06 is 60V, as specified in the datasheet. Exceeding this voltage can lead to device damage or failure.
  • Thermal management is critical for the FDP025N06. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 10°C/W. Also, consider using a thermal interface material to reduce thermal resistance.
  • The maximum allowed power dissipation for the FDP025N06 is dependent on the ambient temperature and the thermal resistance of the device. A general rule of thumb is to limit the power dissipation to 1W or less for reliable operation.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDP025N06 Overview

Use the download button to access the FDP025N06 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDP02, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDP025N06

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑