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FDP032N08 - onsemi

Description: RDS(on) = 2.5mΩ ( Typ.) @ VGS = 10V, ID = 75A; RoHS Compliant; High Performance Trench Technology for Extremely Low RDS(on) ; Low Gate Charge; High Power and Current Handling Capability; Fast Switching Speed

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PCB Footprints
FDP032N08 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 MOLDED 3,LEAD
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FDP032N08 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 MOLDED 3,LEAD
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FDP032N08 Details

  • Manufacturer Part Number:

    FDP032N08

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1995 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    235 A

  • Drain-source On Resistance-Max:

    0.0032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    800 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    375 W

  • Pulsed Drain Current-Max (IDM):

    940 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    932 ns

  • Turn-on Time-Max (ton):

    862 ns

FDP032N08 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FDP032N08 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, make sure to provide a stable voltage supply to the gate driver, and ensure the gate-source voltage (Vgs) is within the recommended range of 4.5V to 15V. Additionally, use a suitable gate resistor (Rg) to limit the gate current.
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate and source pins close together, and use a ground plane to reduce inductance. Avoid using vias under the device, and keep the PCB thickness to a minimum.
  • To protect the FDP032N08 from ESD, handle the device by the body or use an anti-static wrist strap. Use ESD-protected workstations and tools, and ensure the PCB is designed with ESD protection in mind, such as using ESD diodes or resistors.
  • To ensure proper thermal management, use a heat sink with a thermal interface material (TIM) to reduce thermal resistance. Ensure good airflow around the device, and consider using a thermal pad or thermal tape to improve heat transfer. Monitor the device's junction temperature and adjust the thermal management strategy accordingly.

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