FDP03 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDP032N08B-F102 onsemi	1	Low Reverse Recovery Charge, Qrr = 102 nC; RoHS Compliant; Enables High Efficiency in Synchronous Rectification; Soft Reverse Recovery Body Diode; Fast Switching Speed; 100% UIL Tested; RDS(on) = 2.85mΩ (Typ.)@ VGS = 10V, ID = 50A; Low FOM RDS(on)*QG	Transistor Outline, Vertical	FDP032N08B-F102	3D model available Symbol and footprint available 3	1 Download Model
	FDP032N08B_F102 onsemi	1	Fairchild FDP032N08B_F102 N-channel MOSFET Transistor, 211 A, 80 V, 3-Pin TO-220	Transistor Outline, Vertical	FDP032N08B_F102	3D model available Symbol and footprint available 3	1 Download Model
	FDP032N08 onsemi	1	RDS(on) = 2.5mΩ ( Typ.) @ VGS = 10V, ID = 75A; RoHS Compliant; High Performance Trench Technology for Extremely Low RDS(on) ; Low Gate Charge; High Power and Current Handling Capability; Fast Switching Speed	Transistor Outline, Vertical	FDP032N08	3D model available Symbol and footprint available 3	1 Download Model
	FDP036N10A onsemi	1	Low Gate Charge, QG = 89nC ( Typ.); Fast Switching Speed; RDS(on) = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A; High Power and Current Handling Capability; High Performance Trench Technology for Extremely Low RDS(on); RoHS Compliant	Transistor Outline, Vertical	FDP036N10A	3D model available Symbol and footprint available 3	1 Download Model

	FDP038AN06A0 onsemi	1	QG(tot) = 96nC (Typ.) @ VGS = 10V; UIS Capability (Single Pulse and Repetitive Pulse); Low Miller Charge; RDS(on) = 3.5mΩ (Typ.) @ VGS = 10V, ID = 80A; Low Qrr Body Diode	Transistor Outline, Vertical	FDP038AN06A0	3D model available Symbol and footprint available 3	1 Download Model
	FDP038AN06A0_F102 onsemi	1	MOSFET 60V80A3.8OHMS MOSFET NCH PWR TRENCH	Transistor Outline, Vertical	FDP038AN06A0_F102	3D model available Symbol and footprint available 3	1 Download Model
	NVAF-DP-03-2-05.0-S-2-K-TR SAMTEC	1	96 Position Connector High Density Array, Male Surface Mount Gold, 0.80 mm NovaRay® Extreme Density & Performance Socket	Other	NVAF-DP-03-2-05.0-S-2-K-TR	3D model available Symbol and footprint available 3	1 Download Model
	NVAF-DP-03-2-07.0-S-2-K-TR SAMTEC	1	0.80 mm NovaRay® Extreme Density & Performance Socket	Other	NVAF-DP-03-2-07.0-S-2-K-TR	3D model available Symbol and footprint available 3	1 Download Model
	NVAF–DP–03–2–05.0–S–2 SAMTEC	1	0.80 mm NovaRay Extreme Density & Performance Socket	Other	NVAF–DP–03–2–05.0–S–2	3D model available Symbol and footprint available 3	1 Download Model
	FDP030N06B-F102 onsemi	1	N-Channel PowerTrench® MOSFET 60V, 195A, 3.1mΩ, TO-220 3L, 800-TUBE		FDP030N06B-F102	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDP032N08-F102 onsemi	1	Power Field-Effect Transistor, 235A I(D), 75V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP032N08-F102	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDP030N06B_F102 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP030N06B_F102	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDP030N06 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP030N06	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDP030N06 onsemi	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP030N06	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDP030N06B_F102 onsemi	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP030N06B_F102	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDP038AN06A0 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP038AN06A0	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDP039N08B_F102 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 120A I(D), 80V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3		FDP039N08B_F102	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDP038AN06A0-F102 onsemi	1	Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP038AN06A0-F102	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDP032N08B_F102 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 120A I(D), 80V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP032N08B_F102	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDP038AN06A0-F101 Fairchild Semiconductor Corporation	1	Transistor		FDP038AN06A0-F101	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDP039N08B-F102 onsemi	1	N-Channel PowerTrench® MOSFET 80V, 171A, 3.9mΩ, TO-220 3L, 800-TUBE		FDP039N08B-F102	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDP039N08B_F102 onsemi	1	N-Channel PowerTrench® MOSFET 80V, 171A, 3.9mΩ, TO-220 3L, 6400-RAIL		FDP039N08B_F102	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDP032N08 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 120A I(D), 75V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP032N08	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDP038AN06A0_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP038AN06A0_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDP036N10A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 120A I(D), 100V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP036N10A	3D model not available Symbol and footprint not available 0	0 Build or Request
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