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FDP038AN06A0 - onsemi

Description: QG(tot) = 96nC (Typ.) @ VGS = 10V; UIS Capability (Single Pulse and Repetitive Pulse); Low Miller Charge; RDS(on) = 3.5mΩ (Typ.) @ VGS = 10V, ID = 80A; Low Qrr Body Diode

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PCB Footprints
FDP038AN06A0 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 3L_2022
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FDP038AN06A0 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 3L_2022
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FDP038AN06A0 Details

  • Manufacturer Part Number:

    FDP038AN06A0

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220AB, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.1

  • Avalanche Energy Rating (Eas):

    625 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.0038 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    310 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    115 ns

  • Turn-on Time-Max (ton):

    175 ns

FDP038AN06A0 Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB.
  • The FDP038AN06A0 requires a gate-source voltage (Vgs) of 10V to ensure the device is fully enhanced. A gate resistor (Rg) of 1-10kΩ is recommended to limit the gate current and prevent oscillations.
  • Exceeding the maximum Tj rating can lead to reduced device lifespan, increased thermal resistance, and potentially catastrophic failure. Ensure proper thermal management and heat sinking to maintain Tj below the maximum rating.
  • Handle the device with ESD-protective equipment and follow proper ESD-handling procedures. Use an ESD-protective wrist strap or mat, and ensure the PCB has ESD-protection components, such as TVS diodes or ESD-protection arrays.
  • A gate driver IC with a high current capability (e.g., 1A-2A) is recommended to ensure fast switching times and minimize power losses. A bootstrap capacitor and resistor can be used to generate the gate voltage.

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FDP038AN06A0 Overview

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Part Image FDP038AN06A0_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB