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FDP047AN08A0 - onsemi

Description: Qg(tot) = 92nC (Typ.), VGS = 10V ; rDS(ON) = 4.0 mΩ (Typ.), VGS = 10V, ID = 80A ; UIS Capability (Single Pulse and Repetitive Pulse); Low QRR Body Diode ; Low Miller Charge

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FDP047AN08A0 - onsemi - PCB symbol
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FDP047AN08A0 - onsemi PCB footprint - Other - Other - FDP047AN08A0-1
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FDP047AN08A0 - onsemi - 3D model - Other - FDP047AN08A0-1
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FDP047AN08A0 Details

  • Manufacturer Part Number:

    FDP047AN08A0

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220AB, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    475 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0047 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP047AN08A0 Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB for better heat dissipation.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator can be used to regulate the input voltage, and a biasing circuit with a resistor and capacitor can be used to set the gate-source voltage.
  • The device is sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Handling the device with an ESD wrist strap or mat, and storing it in an anti-static bag can prevent damage.
  • The maximum power dissipation of the device can be determined by calculating the maximum current and voltage ratings specified in the datasheet. The power dissipation can be calculated using the formula: P = Vds x Ids, where Vds is the drain-source voltage and Ids is the drain-source current.
  • The thermal resistance values for the device are typically specified in the datasheet. For the FDP047AN08A0, the thermal resistance from junction to case (RθJC) is 1.5°C/W, and the thermal resistance from case to ambient (RθCA) is 62.5°C/W.

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FDP047AN08A0 Overview

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FDP047AN08A0 Alternates

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Part Image FDP047AN08A0_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 80A I(D), 75V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB