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FDP8870 - onsemi

Description: Obsolete - N-Channel PowerTrench 30V, 156A, 4.1mW

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FDP8870 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A
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3D Models
FDP8870 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A
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FDP8870 Details

  • Manufacturer Part Number:

    FDP8870

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220AB, 3 PIN

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    19 A

  • Drain-source On Resistance-Max:

    0.0046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP8870 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDP8870 involves keeping the high-current paths short and wide, using a solid ground plane, and placing the input and output capacitors close to the device. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the FDP8870 for low standby power consumption, ensure that the EN pin is properly biased, use a low-ESR input capacitor, and minimize the output voltage ripple. Additionally, consider using a low-quiescent-current LDO regulator for the VCC supply, and ensure that the device is in shutdown mode when not in use.
  • The maximum allowed voltage on the EN pin is 6V. To protect it from overvoltage, use a voltage divider or a zener diode clamp circuit to limit the voltage to a safe level. Additionally, consider adding a series resistor to limit the current into the EN pin.
  • To ensure the FDP8870 is stable and reliable, follow the recommended PCB layout guidelines, use high-quality components, and ensure that the input and output capacitors meet the recommended specifications. Additionally, verify that the device is operated within its recommended operating conditions, and consider adding overvoltage and undervoltage protection circuits.
  • The FDP8870 is rated for operation up to 150°C. However, the device's performance and reliability may degrade at high temperatures. Ensure that the device is properly derated for high-temperature operation, and consider using a heat sink or thermal management system to keep the device within its recommended operating temperature range.

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FDP8870 Overview

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Part Image FDP8870 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB