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FDP8896 - onsemi

Description: High Performance Trench Technology for Extremely Low RDS(ON); RDS(ON) = 7.0mΩ @ VGS = 4.5V, ID=35A; High Power and Current Handling Capability; Low Gate Charge; RDS(ON) = 5.9mΩ @ VGS = 10V, ID=35A; RoHS Compliant

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FDP8896 - onsemi  - 3D model
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FDP8896 Details

  • Manufacturer Part Number:

    FDP8896

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    LEAD FREE, TO-220AB, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    74 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    80 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP8896 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane and ensure good thermal conductivity.
  • Bias the FDP8896 with a stable voltage source (e.g., 5V) and ensure the input voltage is within the recommended range (4.5V to 5.5V). Use a 10uF capacitor for input decoupling and a 1uF capacitor for output decoupling.
  • The maximum current rating for the FDP8896 is 3A. However, it's recommended to operate within the recommended operating current range (1.5A to 2.5A) for optimal performance and reliability.
  • Use a voltage supervisor or a voltage monitor IC to detect overvoltage and undervoltage conditions. Implement a power-on reset (POR) circuit to ensure the FDP8896 is properly reset during power-up.
  • Use a TVS (Transient Voltage Suppressor) diode or a dedicated ESD protection IC to protect the FDP8896 from electrostatic discharge. Ensure the ESD protection device is rated for the maximum voltage and current of the FDP8896.

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FDP8896 Overview

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Part Image ISL9N307AP3 Rochester Electronics LLC

75A, 30V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Image FDP8896 Rochester Electronics LLC

80A, 30V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220AB, 3 PIN

Part Image ISL9N306AP3 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image FDP7042L Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 50A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image FDP8896_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

For a full list of alternate parts for FDP8896, check out Findchips.com