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FDPF045N10A - onsemi

Description: Fast Switching Speed; RDS(on) = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A; High Performance Trench Technology for Extremely Low RDS(on); Low Gate Charge, QG = 57nC ( Typ.); High Power and Current Handling Capability; RoHS Compliant

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FDPF045N10A - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220F_1
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FDPF045N10A - onsemi  - 3D model - Transistor Outline, Vertical - TO-220F_1
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FDPF045N10A Details

  • Manufacturer Part Number:

    FDPF045N10A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    SC-91A, TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    637 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    67 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    268 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDPF045N10A Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FDPF045N10A can withstand is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper cooling, make sure to provide a sufficient heat sink, and apply a thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 125W.
  • The recommended gate resistor value for the FDPF045N10A is between 10Ω to 100Ω. However, the optimal value depends on the specific application and the required switching frequency. A higher gate resistor value can reduce the switching speed, while a lower value can increase the switching speed but may cause oscillations.
  • Yes, the FDPF045N10A is suitable for high-reliability applications. It is manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and assembly guidelines to ensure the device operates within its specified parameters.
  • To protect the FDPF045N10A from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage to the recommended maximum value. Additionally, use a current sense resistor and a current limiter to prevent excessive current. It's also recommended to use a fuse or a circuit breaker to protect the device from overcurrent conditions.

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FDPF045N10A Overview

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