Part Image

FDPF12N60NZ - onsemi

Description: RoHS compliant; RDS(on) = 530mΩ ( Typ.)@ VGS = 10V, ID = 6A; Low Crss ( Typ. 12pF); Low gate charge ( Typ. 26nC); 100% avalanche tested; ESD improved capability; Improved dv/dt capability

Download FDPF12N60NZ Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDPF12N60NZ - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220,Molded,3-Lead,Full Pack,EIAJ SC91 straight Lead
click to zoom
3D Models
FDPF12N60NZ - onsemi  - 3D model - Transistor Outline, Vertical - TO220,Molded,3-Lead,Full Pack,EIAJ SC91 straight Lead
click to zoom
  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for FDPF12N60NZ
  • Part Number FDPF12N60NZ
  • Manufacturer onsemi
  • Pin Count 3
  • Part Category MOSFET (N-Channel)
  • Package Category Transistor Outline, Vertical
  • Footprint Name Transistor Outline, Vertical - TO220,Molded,3-Lead,Full Pack,EIAJ SC91 straight Lead
  • Released Date Jul 8, 2020
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

FDPF12N60NZ Details

  • Manufacturer Part Number:

    FDPF12N60NZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    SC-91A, TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    60 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    565 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.65 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    39 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDPF12N60NZ Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FDPF12N60NZ can withstand is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and provide adequate airflow around the heat sink.
  • The recommended gate resistor value for the FDPF12N60NZ is between 10Ω to 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may slow down the switching speed.
  • Yes, the FDPF12N60NZ is suitable for high-reliability applications. It is manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and assembly guidelines to ensure the device operates within its specified parameters.
  • To protect the FDPF12N60NZ from ESD, handle the device by the body or use an anti-static wrist strap or mat. Ensure that the device is stored in an anti-static bag or tube, and avoid touching the device's pins or leads.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDPF12N60NZ Overview

Use the download button to access the FDPF12N60NZ schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDPF1, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDPF12N60NZ

Showing 0 results

FDPF12N60NZ Alternates

Showing results

Image Part Number Model
Part Image FDPF12N60NZ Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB