Please enter a minimum 3 letters or numbers
Technical Content
Part Image

FQPF12N60C - onsemi

Description: Last Shipments - Power MOSFET, N-Channel, Logic Level, QFET, 60 V, 10 A, 110 mΩ, TO-220F

Download FQPF12N60C Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
FQPF12N60C - onsemi - PCB symbol
click to zoom
PCB Footprints
FQPF12N60C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220F-ren1
click to zoom
3D Models
FQPF12N60C - onsemi - 3D model - Transistor Outline, Vertical - TO-220F-ren1
click to zoom

FQPF12N60C Details

  • Manufacturer Part Number:

    FQPF12N60C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    870 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.65 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQPF12N60C Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FQPF12N60C is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using a thermal interface material if necessary.
  • The recommended gate drive voltage for the FQPF12N60C is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
  • Yes, the FQPF12N60C is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
  • To protect the FQPF12N60C from overvoltage and overcurrent, consider using a voltage clamp or a surge protector, and ensure that the device is operated within its specified voltage and current ratings.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQPF12N60C Overview

Use the download button to access the FQPF12N60C schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQPF1, or try a keyword search, such as Power Field-Effect Transistors

Suggested Parts

If you searched for FQPF12N60C, you might also be interested in these parts:
Part Number
IR2151
F03B250V1/8AS
F02A250V1/2AS
JS102011SCQN
CLP-103-02-L-DH-TR
S102031MS02Q
MSP430F5529IPN
FTR-K1CK012W
RTH14012

Parts related to FQPF12N60C

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

FQPF12N60C Alternates

Showing results

Image Part Number Model
Part Image FDPF12N60NZ onsemi

Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image FDPF12N60NZ Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB