Part Image

FDS3890 - onsemi

Description: 4.7 A, 80 V; High power and current handling capability; RDS(on) = 44 mΩ@ VGS = 10 V; High performance trench technology for extremely low RDS(ON); RDS(on) = 50 mΩ @ VGS = 6 V; Fast switching speed

Download FDS3890 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDS3890 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8
click to zoom
3D Models
FDS3890 - onsemi  - 3D model - Small Outline Packages - SOIC8
click to zoom

FDS3890 Details

  • Manufacturer Part Number:

    FDS3890

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    175 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    4.7 A

  • Drain-source On Resistance-Max:

    0.044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS3890 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the device away from heat sources and ensure good airflow.
  • Use a heat sink with a thermal resistance of 10°C/W or lower, and ensure good thermal interface material (TIM) between the device and heat sink. Monitor junction temperature (TJ) and reduce power dissipation if TJ exceeds 150°C.
  • The maximum allowed voltage on the input pins is 5.5V, but it's recommended to keep it below 5V to ensure reliable operation and prevent damage.
  • Use ESD protection devices (e.g., TVS diodes) on the input lines, and ensure that the PCB layout and handling procedures follow ESD-safe practices.
  • A 10uF to 22uF ceramic capacitor is recommended for the output filter, depending on the specific application requirements and noise tolerance.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDS3890 Overview

Use the download button to access the FDS3890 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDS38, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FDS3890

Showing 0 results