FDS38 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDS3890 onsemi	1	4.7 A, 80 V; High power and current handling capability; RDS(on) = 44 mΩ@ VGS = 10 V; High performance trench technology for extremely low RDS(ON); RDS(on) = 50 mΩ @ VGS = 6 V; Fast switching speed	Small Outline Packages	FDS3890	3D model available Symbol and footprint available 3	1 Download Model
	FDS3812L86Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.4A I(D), 80V, 0.074ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS3812L86Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS3890D84Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS3890D84Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS3812_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.4A I(D), 80V, 0.074ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS3812_NL	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDS3812F011 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.4A I(D), 80V, 0.074ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS3812F011	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS3890 Rochester Electronics LLC	1	4.7A, 80V, 0.044ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8		FDS3890	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS3890L86Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS3890L86Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS3812 Rochester Electronics LLC	1	3.4A, 80V, 0.074ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8		FDS3812	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS3890 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS3890	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS3890L99Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS3890L99Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS3890_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS3890_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS3890S62Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS3890S62Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS3890F011 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS3890F011	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS3812 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.4A I(D), 80V, 0.074ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS3812	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDS3812D84Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.4A I(D), 80V, 0.074ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDS3812D84Z	3D model not available Symbol and footprint not available 0	0 Build or Request

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