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FDS6570A - onsemi

Description: High performance trench technology for extremely low RDS(ON) ; Low gate charge ( 47nC typical ) ; 15 A, 20 V RDS(on) = 0.0075 Ω @ VGS = 4.5 V RDS(on) = 0.010 Ω @ VGS = 2.5 V ; Fast switching speed ; High power and current handling capability

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FDS6570A - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB
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FDS6570A - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB
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FDS6570A Details

  • Manufacturer Part Number:

    FDS6570A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6570A Frequently Asked Questions (FAQs)

  • The FDS6570A can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the gate to a voltage source through a 1 kΩ resistor, and connect the source to ground through a 10 kΩ resistor. This will provide a stable operating point.
  • To minimize thermal resistance, use a thermal pad with a minimum size of 2 mm x 2 mm, and ensure the PCB has a solid copper ground plane. This will help to dissipate heat efficiently.
  • Yes, the FDS6570A is suitable for high-frequency switching applications up to 1 MHz. However, ensure proper PCB layout and decoupling to minimize ringing and electromagnetic interference (EMI).
  • To protect the FDS6570A from ESD, use an ESD wrist strap or mat during handling, and ensure the PCB has ESD protection diodes or resistors to prevent damage.

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