Part Image

FDS6576 - onsemi

Description: High power and current handling capability ; RDS(ON) = 0.014 Ω @ VGS = -4.5 V ; RoHS Compliant.; Low gate charge (44nC typical) ; High performance trench technology for extremely low RDS(ON) ; Fast switching speed ; -11 A, -20 V. ; RDS(ON) = 0.020 Ω @ VGS = -2.5 V ; Extended VGSS range (+-12V) for battery applications

Download FDS6576 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDS6576 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC-8_2020-1
click to zoom
3D Models
FDS6576 - onsemi  - 3D model - Small Outline Packages - SOIC-8_2020-1
click to zoom

FDS6576 Details

  • Manufacturer Part Number:

    FDS6576

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS6576 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the device away from heat sources and ensure good airflow.
  • Use a heat sink with a thermal resistance of ≤ 10°C/W, ensure good airflow, and follow the recommended PCB layout. Monitor the junction temperature (TJ) and adjust the operating conditions accordingly.
  • The maximum allowed voltage on the gate pin is 20V, but it's recommended to keep it below 15V to ensure reliable operation and prevent damage.
  • Yes, but ensure the switching frequency is below 100 kHz to minimize losses and electromagnetic interference (EMI). Use a suitable gate driver and layout to minimize parasitic inductance.
  • Use a voltage regulator or a TVS diode to protect against overvoltage. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDS6576 Overview

Use the download button to access the FDS6576 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDS65, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to FDS6576

Showing 0 results

FDS6576 Alternates

Showing results

Image Part Number Model
Part Image FDS6576 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS6576_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS6576D84Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDS6576F011 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET