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FDS8813NZ - onsemi

Description: Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.5 A; RoHS compliant ; High performance trench technology for extremely low rDS(on) ; HBM ESD protection level of 5.6kV typical (note 3) ; High power and current handling capability ; Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 16 A

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FDS8813NZ Details

  • Manufacturer Part Number:

    FDS8813NZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    18.5 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    520 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS8813NZ Frequently Asked Questions (FAQs)

  • The FDS8813NZ can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the VCC pin to a stable 5V supply, and the VBS pin to a stable 12V supply. Also, ensure the input voltage (VIN) is within the recommended range of 4.5V to 18V.
  • To minimize EMI and thermal issues, use a multi-layer PCB with a solid ground plane, keep the input and output traces short and separate, and use thermal vias to dissipate heat. Also, place the device near a heat sink or a thermal pad.
  • Use a voltage regulator or a voltage limiter to prevent overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator to detect excessive current, and then shut down the device or trigger an alarm.
  • A bootstrap gate drive circuit is recommended, which uses a capacitor to store energy and a diode to isolate the gate drive from the power supply. This ensures proper gate voltage and minimizes power losses.

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FDS8813NZ Overview

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Part Image FDS8813NZ Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 18.5A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET