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FDS8870 - onsemi

Description: rDS(ON) = 4.9 mΩ (Typ), VGS = 4.5 V, ID = 17 A; Low gate charge; High power and current handling capability; rDS(ON) = 4.2 mΩ (Typ), VGS = 10 V, ID = 18 A; High performance trench technology for extremely lowrDS(ON); RoHS Compliant

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FDS8870 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS8870 - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS8870 Details

  • Manufacturer Part Number:

    FDS8870

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    420 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS8870 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the device away from heat sources and ensure good airflow.
  • Ensure the input voltage is within the recommended range (4.5V to 18V) and the output voltage is set correctly using the FB pin. Also, ensure the input capacitor is properly sized and placed close to the device.
  • The maximum output current capability of the FDS8870 is 3.5A, but it can be limited by the external components and PCB design. Ensure the output inductor and capacitor are properly sized to handle the desired output current.
  • Check the PCB layout, component values, and soldering quality. Ensure the input and output capacitors are properly sized and placed. Use an oscilloscope to check for oscillations and ringing. Consult the datasheet and application notes for troubleshooting guidelines.
  • The FDS8870 is rated for operation up to 150°C junction temperature. However, the device's performance and reliability may degrade at high temperatures. Ensure proper thermal design and consider using a heat sink or thermal interface material if operating in high-temperature environments.

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FDS8870 Overview

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Part Image FDS8870 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 18A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET