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FDS8878 - onsemi

Description: RDS(ON) = 14 mΩ @ VGS = 10 V @ ID = 10.2 A; High power and current handling capability; High performance trench technology for extremely low rDS(ON); RDS(ON) = 17 mΩ @ VGS = 4.5 V @ ID = 9.3 A; Low gate charge; RoHS Compliant

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FDS8878 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS8878 - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE 751EB ISSUE A
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FDS8878 Details

  • Manufacturer Part Number:

    FDS8878

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8, SOIC-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    57 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    9.3 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    111 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2.5 W

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS8878 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.
  • Ensure the input voltage (VIN) is within the recommended range (4.5V to 18V). Use a stable voltage regulator and decoupling capacitors to minimize noise and ripple.
  • The maximum current rating is 3.5A per channel, but it's recommended to derate the current to 2.5A per channel for optimal reliability and thermal performance.
  • Use a voltage supervisor or overvoltage protection (OVP) circuit to prevent voltage exceeding the recommended maximum. Implement overcurrent protection (OCP) using a current sense resistor and a comparator or a dedicated OCP IC.
  • Use a TVS (transient voltage suppressor) diode or a dedicated ESD protection IC to protect the device from electrostatic discharge. Ensure the ESD protection device is rated for the maximum voltage and current of the application.

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Part Image FDS8878 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 10.2A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET