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FDS89161LZ - onsemi

Description: RoHS Compliant ; Max rDS(on) = 160 mΩat VGS = 4.5 V, ID = 2.1 A ; High performance trench technology for extremely low rDS(on) ; High power and current handling capability in a widely used surface mount package ; CDM ESD protection level > 2KV typical (Note 4) ; Max rDS(on) = 105 mΩat VGS = 10 V, ID = 2.7 A ; 100% UIL Tested ; Shielded Gate MOSFET Technology

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FDS89161LZ - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SO-8_2021
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FDS89161LZ - onsemi  - 3D model - Small Outline Packages - SO-8_2021
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FDS89161LZ Details

  • Manufacturer Part Number:

    FDS89161LZ

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    2.7 A

  • Drain-source On Resistance-Max:

    0.105 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    4 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    31 W

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    27 ns

  • Turn-on Time-Max (ton):

    20 ns

FDS89161LZ Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FDS89161LZ is 150°C. However, it's recommended to operate the device at a junction temperature below 125°C for optimal performance and reliability.
  • To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet. Additionally, ensure that the input voltage is within the recommended range (typically 10-18V) and that the output voltage is set to the desired level (typically 5V or 3.3V).
  • For optimal thermal performance, it's recommended to use a multi-layer PCB with a solid ground plane and to place the device on a thermal pad. Ensure that the device is mounted on a heat sink or a thermal interface material (TIM) to dissipate heat efficiently. Follow the recommended PCB layout guidelines in the datasheet and application notes for optimal performance.
  • To troubleshoot issues with the FDS89161LZ, start by verifying the input voltage, output voltage, and current draw. Check for any signs of overheating, such as excessive temperature or thermal shutdown. Verify that the device is properly biased and that the output voltage is within the recommended range. Consult the datasheet and application notes for troubleshooting guidelines and use oscilloscopes or other diagnostic tools to identify the root cause of the issue.
  • To minimize EMI and EMC issues, follow the recommended PCB layout guidelines and ensure that the device is properly shielded. Use a common-mode choke or ferrite bead to filter out high-frequency noise, and consider using a shielded inductor or a common-mode filter. Consult the datasheet and application notes for EMI and EMC guidelines and follow relevant industry standards (e.g., CISPR, FCC).

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