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FDT3612 - onsemi

Description: High power and current handling capability in awidely used surface mount package; RDS(on) = 130 mΩ @ VGS = 6 V; RDS(on) = 120 mΩ@ VGS = 10 V; High performance trench technology for extremely low RDS(ON); 3.7 A, 100 V; Fast switching speed; Low gate charge (14nC typical)

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PCB Footprints
FDT3612 - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT  233
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3D Models
FDT3612 - onsemi  - 3D model - SOT223 (3-Pin) - SOT  233
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FDT3612 Details

  • Manufacturer Part Number:

    FDT3612

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    3.7 A

  • Drain-source On Resistance-Max:

    0.12 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.1 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDT3612 Frequently Asked Questions (FAQs)

  • The FDT3612 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • The FDT3612 requires a bias voltage of 2.5V to 5.5V on the VCC pin, and a bias current of 1mA to 10mA on the IBIAS pin. Ensure proper biasing for optimal performance and to prevent damage to the device.
  • Use a 4-layer PCB with a solid ground plane, and keep the signal traces short and away from noise sources. Use a 50Ω impedance-controlled trace for the output signal, and add a 10nF decoupling capacitor between VCC and GND.
  • The FDT3612 has a high output impedance, so use a 50Ω termination resistor at the receiving end to ensure signal integrity and prevent reflections.
  • Use a TVS diode or a transient voltage suppressor (TVS) with a standoff voltage of 5.5V or less to protect the FDT3612 from electrostatic discharge (ESD) events.

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FDT3612 Overview

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