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FDT434P - onsemi

Description: Obsolete - N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ

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PCB Footprints
FDT434P - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - FQT2P25TF
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3D Models
FDT434P - onsemi  - 3D model - SOT223 (3-Pin) - FQT2P25TF
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FDT434P Details

  • Manufacturer Part Number:

    FDT434P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Package Description:

    SOT-223, 4 PIN

  • Manufacturer Package Code:

    318H-01

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDT434P Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the thermal pad to connect to the copper area.
  • The FDT434P requires a bias voltage of 5V ± 10% on the VCC pin, and a bias current of 1mA to 10mA on the IBIAS pin. Ensure that the bias voltage and current are within the recommended range for optimal performance.
  • The maximum allowable power dissipation for the FDT434P is 1.5W. Exceeding this limit can cause the device to overheat and potentially fail.
  • The FDT434P is sensitive to ESD. Handle the device by the body, not the pins, and use an ESD wrist strap or mat when handling the device. Ensure that the PCB and assembly process also follow ESD protection guidelines.
  • The recommended operating temperature range for the FDT434P is -40°C to 125°C. Operating the device outside of this range can affect its performance and reliability.

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FDT434P Overview

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Part Image FDT434P Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET