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FDT439N - onsemi

Description: Fast switching speed ; High power and current handling capabitlity in a widely used surface mount package ; 6.3 A, 30 V RDS(on) = 0.045 Ω @ VGS = 4.5 V RDS(on) = 0.058 Ω @ VGS = 2.5 V

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PCB Footprints
FDT439N - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - BCP56-16xcx
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3D Models
FDT439N - onsemi  - 3D model - SOT223 (3-Pin) - BCP56-16xcx
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FDT439N Details

  • Manufacturer Part Number:

    FDT439N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6.3 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDT439N Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDT439N is -55°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended bias voltage is Vgs = 10V, Vds = 15V.
  • The maximum current rating for the FDT439N is 3.5A.
  • To protect the FDT439N from ESD, handle the device with an anti-static wrist strap or mat, and ensure that all equipment is grounded. Avoid touching the device's pins or leads.
  • For optimal performance, use a PCB layout with a solid ground plane, and keep the source and drain pins as close as possible to minimize inductance. Use a thermal pad for heat dissipation.

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FDT439N Overview

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Part Image FDT439N Rochester Electronics LLC

6.3A, 30V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET

Part Image FDT439N Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDT439N_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET