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FDT457N - onsemi

Description: High density cell design for extremely low RDS(ON) ; 5 A, 30 V RDS(ON) = 0.06 Ω @ VGS = 10 V RDS(ON) = 0.090 Ω @ VGS = 4.5 V ; High power and current handling capability in a widely used surface mount package

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FDT457N - onsemi PCB footprint - Other - Other - FDT457N-2
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FDT457N Details

  • Manufacturer Part Number:

    FDT457N

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.32

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDT457N Frequently Asked Questions (FAQs)

  • The FDT457N can operate from -55°C to 150°C, making it suitable for high-reliability applications.
  • The FDT457N requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and noise-free for optimal performance.
  • Use a ground plane under the device, keep the leads as short as possible, and use a decoupling capacitor (e.g., 100nF) between the bias pin and ground to minimize EMI and noise.
  • Yes, the FDT457N can be used in switching applications, but be aware of the maximum switching frequency (typically 100 kHz) and ensure the device is properly biased and terminated to prevent oscillations.
  • Use ESD protection devices, such as TVS diodes or ESD suppressors, on the input and output pins, and follow proper handling and storage procedures to prevent ESD damage.

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FDT457N Overview

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Part Image FDT457N Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET