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FDU3N40TU - onsemi

Description: Low Crss ( Typ. 3.7pF); RDS(on) = 3.4Ω ( Max.)@ VGS = 10V, ID = 1A; 100% avalanche tested; Low gate charge ( Typ. 4.5nC)

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PCB Footprints
FDU3N40TU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I - PAK
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FDU3N40TU - onsemi  - 3D model - Transistor Outline, Vertical - I - PAK
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FDU3N40TU Details

  • Manufacturer Part Number:

    FDU3N40TU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    IPAK-3 / DPAK-3 STRAIGHT LEAD

  • Package Description:

    IPAK-3

  • Manufacturer Package Code:

    369AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    46 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    3.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6 pF

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    90 ns

  • Turn-on Time-Max (ton):

    100 ns

FDU3N40TU Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FDU3N40TU is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate resistor (Rg) is properly sized to prevent oscillations and ensure stable operation.
  • For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity. Place the FDU3N40TU near a heat sink or a thermal pad, and use thermal vias to dissipate heat. Keep the PCB layout compact and symmetrical to minimize parasitic inductances and ensure good signal integrity.
  • To protect the FDU3N40TU from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the PCB has ESD protection diodes and resistors in the input and output stages. Use ESD-sensitive handling and storage procedures to prevent damage during manufacturing and assembly.
  • The FDU3N40TU has a typical lifespan of 10-15 years, depending on operating conditions and environmental factors. The device is designed to meet the reliability requirements of automotive and industrial applications, with a failure rate of less than 10 FIT (failures per billion hours) at 125°C.

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FDU3N40TU Overview

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