FDU3N Model Download Search Results
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FDU3N40TU
onsemi
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1 | Low Crss ( Typ. 3.7pF); RDS(on) = 3.4Ω ( Max.)@ VGS = 10V, ID = 1A; 100% avalanche tested; Low gate charge ( Typ. 4.5nC) | Transistor Outline, Vertical | FDU3N40TU |
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FDU3N50NZTU
onsemi
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1 | Power Field-Effect Transistor, 2.5A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | FDU3N50NZTU |
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FDU3N40TU
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDU3N40TU |
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