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FF1200R12IE5 - Infineon

Description: IGBT Modules PP IHM I XHP 1 7KV

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FF1200R12IE5 - Infineon  - 3D model
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FF1200R12IE5 Details

  • Manufacturer Part Number:

    FF1200R12IE5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    1200 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Thr Voltage-Max:

    6.35 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PUFM-X10

  • Number of Elements:

    2

  • Number of Terminals:

    10

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    680 ns

  • Turn-on Time-Nom (ton):

    430 ns

  • VCEsat-Max:

    2.15 V

FF1200R12IE5 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FF1200R12IE5 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The heat sink should be designed to dissipate the maximum power loss of the device, and the thermal interface material should have a low thermal resistance.
  • The recommended gate resistor value for the FF1200R12IE5 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 ohms and 100 ohms is suitable for most applications. However, it's recommended to consult the application note or contact Infineon's technical support for more specific guidance.
  • Yes, the FF1200R12IE5 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
  • The recommended dead time for the FF1200R12IE5 depends on the specific application and switching frequency. As a general guideline, a dead time of 100-200 ns is suitable for most applications. However, it's recommended to consult the application note or contact Infineon's technical support for more specific guidance.

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FF1200R12IE5 Overview

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