SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max:
20 V
JESD-30 Code:
R-XUFM-X7
Number of Elements:
2
Number of Terminals:
7
Operating Temperature-Max:
175 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
680 W
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
600 ns
Turn-on Time-Nom (ton):
190 ns
VCEsat-Max:
1.9 V
FF200R06KE3 Frequently Asked Questions (FAQs)
The maximum operating temperature of the FF200R06KE3 is 150°C, as specified in the datasheet. However, it's recommended to operate the module at a temperature below 125°C for optimal performance and reliability.
To ensure proper thermal management, it's essential to provide a good thermal interface between the module and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
The recommended gate resistor value for the FF200R06KE3 is between 10 ohms and 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
Yes, the FF200R06KE3 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
The maximum allowable voltage transient for the FF200R06KE3 is 1200 V, as specified in the datasheet. However, it's recommended to limit the voltage transient to 1000 V or less to ensure reliable operation and prevent damage to the module.
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FF200R06KE3 Overview
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