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FF200R33KF2CNOSA1 - Infineon

Description: Trans IGBT Module N-CH 3300V 330A 2200W 10-Pin IHV73-3 Tray

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FF200R33KF2CNOSA1 - Infineon  - 3D model
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FF200R33KF2CNOSA1 Details

  • Manufacturer Part Number:

    FF200R33KF2CNOSA1

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MODULE

  • Pin Count:

    8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    330 A

  • Collector-Emitter Voltage-Max:

    3300 V

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X8

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2200 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    1900 ns

  • Turn-on Time-Nom (ton):

    480 ns

  • VCEsat-Max:

    4.25 V

FF200R33KF2CNOSA1 Frequently Asked Questions (FAQs)

  • Infineon provides a reference design and layout guidelines in their application notes and evaluation boards. It's essential to follow these guidelines to ensure proper heat dissipation, minimize parasitic inductances, and optimize signal integrity.
  • When selecting a gate driver, consider the FF200R33KF2CNOSA1's gate charge, threshold voltage, and switching frequency. Ensure the gate driver can provide sufficient current and voltage to charge the gate capacitance quickly and efficiently. Infineon's gate driver selection guide and application notes can provide more detailed guidance.
  • Monitor the FF200R33KF2CNOSA1's temperature, voltage, and current to ensure safe operation. Implement overcurrent, overvoltage, and overtemperature protection mechanisms using external circuitry or a dedicated IC. Infineon's application notes and evaluation boards provide examples of fault detection and protection implementations.
  • Follow Infineon's guidelines for PCB layout, component placement, and shielding. Implement proper filtering, decoupling, and grounding techniques to minimize EMI. Ensure the design meets relevant EMC standards and regulations, such as CISPR and FCC.
  • The FF200R33KF2CNOSA1's reliability and lifetime depend on factors like operating conditions, thermal management, and quality of the assembly process. Follow Infineon's recommended operating conditions, ensure proper thermal management, and implement a robust assembly process to maximize the device's lifespan.

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FF200R33KF2CNOSA1 Overview

Use the download button to access the FF200R33KF2CNOSA1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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