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FF225R17ME7B11BPSA1 - Infineon

Description: IGBT Modules,VCEO Max: 1700 V,Voltage: 2.1 V,Gate-Emitter Leakage Current: 100 nA,Pd - Power Dissipation: 20 mW,Maximum Gate Emitter Voltage: 20 V.

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FF225R17ME7B11BPSA1 - Infineon PCB footprint - Other - Other - FF225R17ME7B11BPSA1-5
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FF225R17ME7B11BPSA1 Details

  • Manufacturer Part Number:

    FF225R17ME7B11BPSA1

  • Manufacturer:

    Infineon Technologies AG

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