Part Image

FF300R12KT3_E - Infineon

Description: IGBT Modules IGBT 1200V 300A

Download FF300R12KT3_E Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
FF300R12KT3_E - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

FF300R12KT3_E Details

  • Manufacturer Part Number:

    FF300R12KT3_E

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    MODULE

  • Pin Count:

    7

  • Country Of Origin:

    Hungary

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    480 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X7

  • Number of Elements:

    2

  • Number of Terminals:

    7

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1450 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    680 ns

  • Turn-on Time-Nom (ton):

    215 ns

  • VCEsat-Max:

    2.15 V

FF300R12KT3_E Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FF300R12KT3_E is -40°C to 150°C, with a junction temperature (Tj) of up to 150°C.
  • To ensure reliability, follow the recommended operating conditions, thermal management guidelines, and layout recommendations provided in the datasheet. Additionally, consider implementing overcurrent protection, overvoltage protection, and thermal monitoring.
  • The recommended gate drive voltage for the FF300R12KT3_E is between 10 V and 15 V, with a maximum gate-source voltage (Vgs) of ±20 V.
  • Yes, the FF300R12KT3_E can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current distribution.
  • The thermal resistance (Rth) of the FF300R12KT3_E can be calculated using the provided thermal impedance Zth(j-a) and Zth(j-c) values in the datasheet, along with the specific cooling system and layout used in the application.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

FF300R12KT3_E Overview

Use the download button to access the FF300R12KT3_E 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like FF300, or try a keyword search, such as IGBTs

Parts related to FF300R12KT3_E

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

FF300R12KT3_E Alternates

Showing results

Image Part Number Model
Part Image FF300R12KT3HOSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 480A I(C), 1200V V(BR)CES, N-Channel